Semiconductor devices and methods of manufacturing the same

ABSTRACT

Provided are a semiconductor device, which can facilitate a salicide process and can prevent a gate from being damaged due to misalign, and a method of manufacturing of the semiconductor device. The method includes forming a first insulation layer pattern on a substrate having a gate pattern and a source/drain region formed at both sides of the gate pattern, the first insulation layer pattern having an exposed portion of the source/drain region, forming a silicide layer on the exposed source/drain region, forming a second insulation layer on the entire surface of the substrate to cover the first insulation layer pattern and the silicide layer, and forming a contact hole in the second insulation layer to expose the silicide layer.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of U.S. Ser. No.14/326,760 filed on Jul. 9, 2014, which is a divisional application ofU.S. Ser. No. 13/241,324 filed on Sep. 23, 2011, which claims priorityfrom Korean Patent Application No. 10-2010-0108669 filed on Nov. 3, 2010in the Korean Intellectual Property Office, and all the benefitsaccruing therefrom under 35 U.S.C. 119, the contents of which in theirentirety are herein incorporated by reference.

BACKGROUND

A recent trend toward high integration of semiconductor devices uses agate electrode of a memory device that occupies an increasingly smallerspace. In this regard, the width and contact area of the gate electrodemay be gradually reduced. Accordingly, contact resistance and sheetresistance of the gate electrode tend to increase, which may undesirablylower the operating speed. Therefore, a salicide (self-aligned silicide)process in which a metal gate is employed in order to reduce theresistance has been studied and developed.

However, since a highly integrated semiconductor device may have areduced gate line width compared to a height of the gate electrode, itmay not be easy to deposit the metal material during the salicideprocess. In addition, in a case where the metal gate and the salicideprocess are both employed, the metal gate may be dissolved in awet-etching solution used in the salicide process or a metal strippingmaterial. As such the metal gate may be damaged. Further, the morehighly integrated the semiconductor device, the smaller themanufacturing margin thereof. Thus, in a case where misalignment occursduring the salicide process, a probability of the metal gate beingdamage may be increased.

SUMMARY

Some embodiments of the present invention provide semiconductor devices,which can facilitate a salicide process and can reduce or prevent damageto a gate due to misalignment.

Some embodiments of the present invention provide methods ofmanufacturing of semiconductor devices.

These and other objects of the present inventive concept will bedescribed in or be apparent from the following description.

According to an aspect of the present disclosure, methods ofmanufacturing of a semiconductor device may include forming a firstinsulation layer pattern on a substrate having a gate pattern and asource/drain region formed at both sides of the gate pattern, the firstinsulation layer pattern having an exposed portion of the source/drainregion. Operations may include forming a silicide layer on the exposedsource/drain region, forming a second insulation layer on the entiresurface of the substrate to cover the first insulation layer pattern andthe silicide layer, and forming a contact hole in the second insulationlayer to expose the silicide layer.

Some embodiments provide that methods of manufacturing a semiconductordevice may include forming on a substrate a dummy gate pattern andsource/drain region formed at both sides of the gate pattern, forming apassivation layer on the dummy gate pattern and the source/drain region,and removing the passivation layer to expose the dummy gate pattern andremoving the exposed dummy gate pattern. Operations may further includeforming a gate insulation layer and a metal layer on the entire surfaceof the substrate to cover a region having the dummy gate pattern removedtherefrom and the passivation layer, and forming a metal gate pattern byperforming planarization until the passivation layer is exposed. Thepassivation layer may be removed and a first insulation layer patternmay be formed on the entire surface of the substrate having a portion ofthe source/drain region exposed. Operations may further include forminga silicide layer on the exposed source/drain region, forming a secondinsulation layer pattern on the entire surface of the substrate to coverthe first insulation layer pattern and the silicide layer, and forming acontact hole in the second insulation layer to expose the silicidelayer.

In some embodiments, a semiconductor device includes a gate patternincluding a gate insulation layer and a gate electrode formed on asubstrate, a source/drain region formed at both sides of the gatepattern, a silicide layer formed on the source/drain region, a contacthole formed on the silicide layer, and an insulation layer formed on thegate pattern and the source/drain region and including the contact holeformed therein. Some embodiments provide that the gate pattern and thesource/drain region have an aspect ratio of 3:1 or less.

In some embodiments, a semiconductor device may include a gate patternincluding a gate insulation layer and a gate electrode formed on asubstrate, a source/drain region formed at both sides of the gatepattern, a silicide layer formed on the source/drain region, a contacthole formed on the silicide layer; and an insulation layer formed on thegate pattern and the source/drain region and including the contact holeformed therein, wherein the gate pattern and the source/drain regionhave an aspect ratio of 3:1 or less.

As described above, in the methods disclosed herein, since a silicidelayer is formed on a source/drain region before forming a contact hole,a difficulty with deposition of a metal during a salicide processperformed after forming the contact hole can be overcome.

In addition, in the methods disclosed herein, it is possible to reduceor prevent damage to a metal gate due to misalignment during a salicideprocess.

Further, since the semiconductor devices disclosed herein may have arelatively small step difference between a source/drain region and agate, which reduces an aspect ratio of a contact hole, efficiency ofsubsequent processes may be increased.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other features and advantages of the present inventionwill become more apparent by describing in detail preferred embodimentsthereof with reference to the attached drawings in which:

FIG. 1 is a cross-sectional view of a semiconductor device according tosome embodiments disclosed herein;

FIG. 2 is a cross-sectional view of a semiconductor device according tosome embodiments disclosed herein;

FIG. 3 is a flow chart illustrating operations corresponding to methodsof manufacturing a semiconductor device according to some embodimentsdisclosed herein;

FIGS. 4A through 4G are cross-sectional views illustrating operationscorresponding to methods of manufacturing a semiconductor device shownin FIG. 3;

FIG. 5 is a flow chart illustrating operations corresponding to methodsof manufacturing a semiconductor device according to some otherembodiments disclosed herein; and

FIGS. 6A through 6N are cross-sectional views illustrating operationscorresponding to methods of manufacturing a semiconductor device shownin FIG. 5.

DETAILED DESCRIPTION

Advantages and features of the present disclosure and methods ofaccomplishing the same may be understood more readily by reference tothe following detailed description of preferred embodiments and theaccompanying drawings. The present invention may, however, be embodiedin many different forms and should not be construed as being limited tothe embodiments set forth herein. Rather, these embodiments are providedso that this disclosure will be thorough and complete and will fullyconvey the concept of the invention to those skilled in the art, and thepresent invention will only be defined by the appended claims. In thedrawings, the thickness of layers and regions are exaggerated forclarity.

It will be understood that when an element or layer is referred to asbeing “on,” or “connected to” another element or layer, it can bedirectly on or connected to the other element or layer or interveningelements or layers may be present. In contrast, when an element isreferred to as being “directly on” or “directly connected to” anotherelement or layer, there are no intervening elements or layers present.As used herein, the term “and/or” includes any and all combinations ofone or more of the associated listed items.

It will be understood that, although the terms first, second, etc. maybe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, for example, a first element, afirst component or a first section discussed below could be termed asecond element, a second component or a second section without departingfrom the teachings of the present invention.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the invention. Asused herein, the singular forms “a”, “an” and “the” are intended toinclude the plural forms as well, unless the context clearly indicatesotherwise. It will be further understood that the terms “comprises”and/or “made of,” when used in this specification, specify the presenceof stated features, integers, steps, operations, elements, and/orcomponents, but do not preclude the presence or addition of one or moreother features, integers, steps, operations, elements, components,and/or groups thereof.

Embodiments described herein will be described referring to plan viewsand/or cross-sectional views by way of ideal schematic views of theinvention. Accordingly, the example views may be modified depending onmanufacturing technologies and/or tolerances. Therefore, the embodimentsdisclosed herein are not limited to those shown in the views, butinclude modifications in configuration formed on the basis ofmanufacturing processes. Therefore, regions exemplified in figures haveschematic properties and shapes of regions shown in figures, exemplifyspecific shapes of regions of elements and do not limit aspects of thedisclosure.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this invention belongs. It will befurther understood that terms, such as those defined in commonly useddictionaries, should be interpreted as having a meaning that isconsistent with their meaning in the context of the relevant art and thepresent disclosure, and will not be interpreted in an idealized oroverly formal sense unless expressly so defined herein.

Hereinafter, the embodiments disclosed herein will be described infurther detail with reference to the accompanying drawings.

A semiconductor device according to some embodiments will now bedescribed in more detail with reference to FIG. 1, which is across-sectional view of a semiconductor device according to someembodiments of the present disclosure.

Referring to FIG. 1, the semiconductor device 100 according to theillustrated embodiment includes a gate pattern 120, a source/drainregion 132, a silicide layer 147, a contact hole 151, a first insulationlayer 143 and a second insulation layer 148. The semiconductor device100 according to the illustrated embodiments may further include a gatespacer 124.

The gate pattern 120 is formed on a substrate 110 and includes a gateinsulation layer 120 a and a gate electrode 120 b.

The substrate 110 may be a silicon substrate, an SOI (Silicon OnInsulator) substrate, a gallium arsenic substrate, a silicon germaniumsubstrate, a ceramic substrate, a rigid substrate such as a quartzsubstrate or a glass substrate for a display, or a substrate made of aflexible plastic such as polyimide, polyester, polycarbonate,polyethersulfone, polymethylmethacrylate, polyethylenenaphthalate,and/or polyethyleneterephthalate, among others.

The gate insulation layer 120 a may use a silicon oxide layer, SiON,Ge_(x)O_(y)N_(z), Ge_(x)Si_(y)O_(z), a highly dielectric material,combinations of these materials, and/or a stack of layers formed bysequentially stacking these materials. Here, the highly dielectricmaterial is formed using HfO₂, ZrO₂, Al₂O₃, Ta₂O₅, hafnium silicate,zirconium silicate or a combination thereof but not limited thereto.FIG. 1 illustrates a structure in which the gate insulation layer 120 asurrounds sidewalls and a bottom of the gate electrode 120 b, but astructure in which the gate electrode 120 b is stacked on the gateinsulation layer 120 a may also be applied to embodiments disclosedherein.

The gate electrode 120 b may be formed of a single film of poly-Si,poly-SiGe, impurity-doped poly-Si, a metal such as Ta, TaN, TaSiN, TiN,Mo, Ru, Ni, or NiSi, or metal silicide, or a stacked film of acombination of these materials, but not limited thereto. Someembodiments provide that the gate electrode 26 may be formed of a metalor metal silicide capable of implementing low resistance on a finer linewidth while not necessitating doping of impurities.

Although not shown in FIG. 1, a hard mask film that protects the gateelectrode 120 b may be formed on the gate electrode 120 b. Here, thehard mask film may be formed of SiN or SiON.

The gate spacer 124 is formed on sidewalls of the gate insulation layer120 a and the gate electrode 120 b to protect the gate electrode 120 b.

The gate spacer 124 may include a first spacer 124 a and a second spacer124 b. The first spacer 124 a may be formed of a silicon oxide film, andthe second spacer 124 b may be formed of a silicon nitride film.

The source/drain region 132 is formed at both sides of the gate pattern120, respectively and may have an elevated structure in which thesource/drain region 132 is elevated from the substrate 110, therebyforming a junction having a constant depth. The elevated source anddrain region structure is formed on a top surface of the substrate 110having a penetration range (Rp) caused by impurity implementation,thereby obtaining a shallow junction structure. Accordingly,deterioration in the device characteristic due to a short channel effectcan be improved.

The source/drain region 132 may be formed of an epitaxially grownsilicon layer. Specifically, in order to suppress diffusion ofimpurities and improve mobility of carriers in a channel region, an NMOSis formed by implanting an impurity such as phosphorus (P) as an n-typedopant into Si or a SiC epitaxial layer, while a PMOS is formed byimplanting an impurity such as boron (B) as an n-type dopant into a SiGeepitaxial layer. In addition, since the source/drain region 132 has afacet formed on upper side surface, a gap between the source/drainregion 132 and the gate pattern 120 may be created at a portion where afacet of the source/drain region 132 is formed.

The gate pattern 120 and the source/drain region 132 may have an aspectratio of 3:1 or less. As used herein, the aspect ratio refers to a ratioof a step difference (a) between a top portion of the gate pattern 120and a top portion of the source/drain region 132 to a width (b) of thesource/drain region 132. When the aspect ratio is 3:1 or less, uniformdeposition may be achieved in a subsequent process. The gate pattern 120and the source/drain region 132 may have a step difference of 250 Å orless from the substrate 110. If the step difference between the gatepattern 120 and the source/drain region 132 is 250 Å or less, the aspectratio may be reduced, thereby facilitating deposition in a subsequentdeposition process performed on the gate pattern 120 and thesource/drain region 132 and forming a uniformly deposited film.

The source/drain region 132 may be formed to have the same height as thegate pattern 120. FIG. 1 illustrates a structure in which thesource/drain region 132 is elevated as high as the gate pattern 120.

The silicide layer 147 is formed on the source/drain region 132 toreduce contact resistance. The silicide layer 147 may be formed bydepositing a metal layer on the source/drain region 132 and reacting themetal layer with the source/drain region 132, followed by removing theunreacted portion of the metal layer.

The silicide layer 147 may include Ni, Co, Pt or Ti, and may be formedby being permeated to the top portion of the source/drain region 132 toa predetermined depth. Alternatively, the silicide layer 147 may beformed on the source/drain region 132 to a predetermined height.

The first insulation layer 143 is formed on the gate pattern 120 and thesource/drain region 132. The first insulation layer 143 serves toplanarize the surface of the substrate 110 having the gate pattern 120and the source/drain region 132 while substantially completely coveringthe gate pattern 120 and the source/drain region 132. In addition, thefirst insulation layer 143 serves to prevent the gate electrode frombeing damaged in a subsequent process by filling the gap by the facet ofthe source/drain region 132. Further, the first insulation layer 143 mayfunction as an etch stopper in an etching process of forming, forexample, a contact hole 151. Therefore, the first insulation layer 143may be formed of a material having a different etch ratio from thesecond insulation layer 148. Specifically, the first insulation layer143 may be formed by a silicon oxide film, a silicon nitride film, or adouble-layered structure of these films. The first insulation layer 143may be formed by a silicon nitride film.

The second insulation layer 148 is formed on the first insulation layer143, and may be formed of, but is not limited to, a silicon oxide film,a silicon nitride film, or a multiple-layered structure of one or moreof these films.

The contact hole 151 is formed in the first insulation layer 143 and thesecond insulation layer 148 to expose the predetermined region of thesilicide layer 147. In detail, since the contact hole 151 is formed onthe silicide layer 147, the silicide layer 147 is exposed at the bottomof the contact hole 151, thereby reducing contact resistance while notnecessitating separately forming a silicide layer in the bottom of thecontact hole 151. The contact hole 151 may be filled with a metal suchas tungsten (W).

In the illustrated embodiments, the source/drain region 132 and the gatepattern 120 may have a relatively small step difference and the contacthole 151 is formed on the silicide layer 147. Therefore, even ifmisalignment occurs during formation of the contact hole, it is possibleto prevent the gate electrode from being damaged.

Next, a semiconductor device 200 according to other embodimentsdisclosed herein will be described with reference to FIG. 2, which is across-sectional view of a semiconductor device according to suchembodiments.

The semiconductor device 200 is different from the semiconductor device100 shown in FIG. 1 in that it has a source and drain region 232different from the corresponding portion of the previous embodiment inview of configuration, including a lightly doped source/drain region 211and a heavily doped source/drain region 212. Thus, the followingdescription of the illustrated semiconductor device will focus on thedifferences from the previously described embodiments of FIG. 1.Accordingly, the same reference numerals will be used to refer to thesame elements as those described in FIG. 1, and detailed explanationthereof may be omitted.

The source and drain regions 232 may be formed of an epitaxial layerformed in a trench formed by etching a predetermined area of thesubstrate 110. In detail, a preliminary trench is formed in thesubstrate 110 and a trench for epitaxial formation is formed by furtherlaterally etching sidewalls of the preliminary trench, followed by beingsubjected to epitaxial growth in the trench for epitaxial formation.

The trench for epitaxial formation may have a hexagonal profile, and theepitaxial layer may be a silicon layer or a silicon germanium (SiGe)layer formed by being subjected to epitaxial growth in the trench forepitaxial formation. The silicon germanium layer may increase current byapplying a compressive stress to a channel region to increase themobility of holes. A tip 213 corresponding to a portion of the trenchhaving the maximum width may be positioned on the same line or may bealigned with the sidewalls of the gate pattern 120. Since the silicongermanium layer formed in the trench for epitaxial formation is formedcloser to the channel region, the compressive stress applied to thechannel region is increased thereby further increasing the mobility ofholes.

A top portion of the epitaxial layer may be formed higher than a topportion of the substrate. An aspect ratio of the source/drain region 232formed of the epitaxial layer to gate pattern 120 may be 3:1 or less. Inaddition, the source and drain region 232 and the gate pattern 120 mayhave a step difference of 250 Å or less. Further, the epitaxial layermay be formed to have the same height as the gate pattern 120.

The lightly doped source/drain region 211 and the heavily dopedsource/drain region 212 surround a peripheral portion of the trench, andthe trench may be formed in the lightly doped source/drain region 211and the heavily doped source/drain region 212. A PMOS transistor may beformed using p-type impurity such as boron (B), and an NMOS transistormay be formed using n-type impurity such as phosphorus (P) or arsenic(As).

The lightly doped source/drain region 211 is formed by implantingimpurity into the substrate in both sides of the gate pattern 120, andthe heavily doped source/drain region 212 is formed by implantingimpurity into a lower portion of the lightly doped source/drain region211 from both sides of the gate spacer 124.

Hereinafter, methods of manufacturing a semiconductor device accordingto some embodiments disclosed herein will now be described withreference to FIGS. 3 and 4A through 4G. FIG. 3 is a flow chartillustrating operations corresponding to methods of manufacturing asemiconductor device according to some embodiments herein, and FIGS. 4Athrough 4G are cross-sectional views illustrating operations of themethods of manufacturing a semiconductor device shown in FIG. 3.

Referring to FIG. 3, the methods of manufacturing a semiconductor deviceaccording to some embodiments include forming a first insulation layerpattern (block 10), forming a silicide layer (block 20), forming asecond insulation layer (block 30), forming a contact hole (block 40),and filling (block 50).

Referring to FIGS. 4A and 4B, a first insulation layer pattern 143 isformed on a substrate having a gate pattern 120 and a source/drainregion 132 formed at both sides of the gate pattern 120 (FIG. 3, block10).

In detail, a first insulation layer 143′ is deposited to cover theentire surface of the gate pattern 120 and the source/drain region 132,a photoresist pattern 142 is formed on the first insulation layer 143′,and a photolithography process is performed using the photoresistpattern 142 as an etch mask, thereby forming the first insulation layerpattern 143 having a predetermined exposed portion of the source/drainregion 132. The first insulation layer 143′ may be formed of a siliconoxide film or a silicon nitride film.

Here, the gate pattern 120 may have a stacked structure in which thegate insulation layer 121, the gate electrode 122 and the hard mask film123 are sequentially stacked. In some embodiments, the hard mask film123 may be omitted.

The gate spacer 124 having a single layered structure or a doublelayered structure may be formed on sidewalls of the gate pattern 120 andthe gate electrode 120 b to protect the gate electrode 120 b. FIG. 4Billustrates that the gate spacer 124 has a double layered structure ofan oxide film 124 a and a nitride film 124 b.

The source/drain region 132 may be formed at both sides of the gatepattern 120 to have a predetermined height so as to have a structure inwhich the source/drain region 132 is elevated from the surface of thesubstrate 110. In addition, the source and drain region may be formedthrough epitaxial growth. Further, the source/drain region 132 may be anepitaxial silicon layer formed in the trench recessed into the substrate110 to a predetermined depth.

Methods for forming the source/drain region of a PMOS transistor willnow be described in more detail. First, a lightly doped source/drainregion is formed by implanting low concentration impurity ions using thegate pattern as an etch mask, and then a gate spacer is formed, followedby implanting high-concentration impurity ions using the gate patternand the gate spacer as etch masks, thereby forming a heavily dopedsource/drain region. Subsequently, a predetermined region of thesubstrate exposed by the gate pattern and the gate spacer is etched toform a trench, and a SiGe epitaxial layer is formed in the trench. Here,the trench may have a hexagonal profile, and the trench may be etchedsuch that a tip of the trench having a maximum width is positioned onthe same line with sidewalls of the gate pattern.

Here, the source/drain region 232 formed of an epitaxial layer and thegate pattern 120 may have an aspect ratio of 3:1 or less. In addition,the source/drain region 232 and the gate pattern 120 may have a stepdifference of 250 Å or less. A top portion of the gate pattern 120 and atop portion of the source/drain region 132 are positioned at the sameheight. Since the gate pattern 120 and the source/drain region 132 havea step difference of 250 Å or less, the aspect ratio thereof arereduced, thereby achieving uniform deposition of the first insulationlayer 143′.

Referring to FIGS. 4C and 4D, metal layers 144, 145 and 146 aredeposited on a predetermined portion of the source/drain region exposedin operations corresponding to block 10 and the first insulation layerpattern 143 to react with silicon of the source/drain region 132 to formthe silicide layer 147 (FIG. 3, block 20).

In detail, forming the silicide layer 147 may include forming a singlelayer or a multi-layered metal layers 144, 145 and 146 containing Ni,Co, Pt, Ti or an alloy thereof on the exposed source/drain region andthe first insulation layer pattern 143. An annealing process isperformed at a temperature of approximately 500 degrees C. toapproximately 800 degrees C. to react the deposited metal with siliconof the source/drain region 132 and remove unreacted metal using anetching process, thereby forming the silicide layer 147. That is to say,the silicide layer 147 of the illustrated embodiments may be formedthrough a salicide (self aligned silicide) process. The silicide layer147 resulting from the reacting of the deposited metal layer withsilicon may be permeated into the source/drain region 132. While FIG. 4Dillustrates that the silicide layer 147 is substantially completelypermeated into the source/drain region 132, the invention is not limitedthereto and the silicide layer 147 may protrude toward the top portionof the source/drain region 132.

In the illustrated embodiments, before forming a contact hole, thesilicide layer 147 is formed on the source/drain region 132. In a casewhere the silicide layer 147 is formed after forming the contact hole, ametal layer may not be uniformly deposited in the contact hole due to alarge aspect ratio of the contact hole, making it difficult to form asufficiently thick silicide layer. In the illustrated embodiments,however, the silicide layer may be formed before forming the contacthole and the gate pattern and the source/drain region may have a smallaspect ratio. In this manner, a silicide layer having a uniformthickness may be formed. In addition, since the first insulation layerpattern 143 serves to protect a gate electrode, it is possible to reduceor prevent damage to the gate electrode when the unreacted metal isetched.

Referring to FIG. 4E, the second insulation layer 148 is formed on thesilicide layer 147 and the first insulation layer pattern 143 (FIG. 3,block 30). In detail, a silicon oxide film or a silicon nitride filmsubstantially completely covering top surfaces of the silicide layer 147and the first insulation layer pattern 143 is deposited, thereby formingthe second insulation layer 148. The first insulation layer 143′ and thesecond insulation layer 148 may be made of different materials.Specifically, the first insulation layer 143′ may be formed of a siliconnitride film, while the second insulation layer 148 may be formed of asilicon oxide film.

Referring to FIG. 4F, a contact hole 151 is formed on the silicide layer147 (FIG. 3, block 40). In detail, the contact hole 151 is formed byetching the second insulation layer 148 so as to expose the silicidelayer 147. The etching of the second insulation layer 148 may beperformed by a method known in the art. Through the above-describedprocess, the silicide layer 147 exists to a lower portion of the contacthole 151, and it is not necessary to separately form a silicide layer inthe contact hole 151. In the process of etching the second insulationlayer 148 in order to form the contact hole 151, the first insulationlayer 143′ may be used as an etch stopper, thereby preventing the gateelectrode 122 from being damaged.

Referring to FIG. 4G, a conductive material is filled in the contacthole 151 (FIG. 3, block 50). In detail, the inside of the contact hole151 is filled with a conductive material such as a metal, therebyforming a metal wire contact. Specifically, tungsten (W) may be used asthe metal.

Reference is now made to FIG. 5, which is a flow chart illustratingoperations corresponding to methods of manufacturing a semiconductordevice according to some embodiments disclosed herein and to FIGS. 6Athrough 6N, which are cross-sectional views illustrating operationscorresponding to the methods of manufacturing a semiconductor deviceshown in FIG. 5. For brevity of explanation, in the methods ofmanufacturing the semiconductor device according to the illustratedembodiments, portions that are the same as or similar to those of themethod of manufacturing the semiconductor device according to theprevious embodiment are denoted by the same reference numerals, and adetailed explanation thereof may be omitted. Accordingly, the followingdescription of the illustrated semiconductor device will focus on thedifferences.

Referring to FIG. 5, operations include forming a dummy gate pattern anda gate spacer (block 1), forming a source/drain region (block 2),forming a passivation layer (block 3), removing the dummy gate pattern(block 4), forming a metal gate (block 5) and removing the passivationlayer (block 6). In addition to, the methods of manufacturing thesemiconductor device according to the illustrated embodiment of thepresent invention may further include steps of forming a firstinsulation layer pattern (block 10), forming a silicide layer (block20), forming a second insulation layer (block 30), forming a contacthole (block 40) and filling (block 50).

Referring to FIG. 6A, the dummy gate pattern 120 and the gate spacer 124are formed on the substrate 110 (FIG. 5, block 1). In detail, a firstinsulation layer, a polysilicon layer, and a second insulation layer aresequentially stacked on the substrate 110 and patterned to form a dummygate pattern 120 having a stacked structure in which the gate insulationlayer 121, the dummy gate 122 and the hard mask film 123 aresequentially stacked. Next, an insulation layer for a first spacer andan insulation layer for a second spacer are sequentially formed onsidewalls of the gate pattern 120 and etched to form a gate spacer 124.The first spacer 124 a is formed of a silicon oxide film, while thesecond spacer 124 b may be formed of a silicon nitride film. Someembodiments provide that the hard mask film 123 may be omitted.

Referring to FIG. 6B, the source/drain region 132 is formed at bothsides of the dummy gate pattern 120, respectively (FIG. 5, block 2). Indetail, the source/drain region 132 doped with impurity ions is formedat both sides of the gate pattern 120 through epitaxial growth,respectively. The epitaxial process for forming the source/drain region132 may be performed at a temperature of approximately 500 degrees C. toabout 900 degrees C. under approximately 1 to 500 torr using a selectiveepitaxial growth process such as a low pressure chemical vapordeposition (LPCVD), ultrahigh vacuum chemical vapor deposition(UHV-CVD), or the like, but may be appropriately adjusted within thescope of the present invention. The source/drain region 132 may beformed of an epitaxial layer such as Si, SiC or SiGe. In the epitaxialprocess, SiH₄, SiH₂Cl₂, SiHCl₃, SiCl₄, SiH_(x)Cl_(y)(x+y=4), Si(OC₄H₉)₄,Si(OCH₃)₄, Si(OC₂H₅)₄, or the like, may be used as a silicon sourcematerial, GeH₄, GeCl₄, GeH_(x)Cl_(y)(x+y=4), or the like, may be used asa germanium source material, and C_(x)H_(y), CH₃SiH₃, or the like,and/or may be used as a carbon source material, among others. In orderto improve selective characteristics, a gas such as HCl or Cl₂ may alsobe added. Specifically, for the purpose of doping, a gas such as B₂H₆,PH₃, AsH₃, or the like may be added.

As shown in FIG. 6C, the source/drain region 232 of PMOS may be formedof an epitaxially grown silicon germanium layer. The silicon germaniumlayer is formed through epitaxial growth in a trench formed by etching apredetermined portion of the substrate 110. The lightly dopedsource/drain region 211 and the heavily doped source/drain region 212surround a peripheral portion of the trench, and the trench may have ahexagonal profile. A tip 213 of the trench may be positioned on the sameline or aligned with sidewalls of the dummy gate pattern 120.

In some embodiments, an aspect ratio of the source/drain region 132 tothe dummy gate pattern 120 may be 3:1 or less. Some embodiments providethat the source/drain region 132 may be formed to have a step differenceof 250 Å or less with respect to a top surface of the dummy gate pattern120. The smaller the step difference between the source/drain region 132and the gate pattern 120, the smaller the aspect ratio, therebyachieving substantially uniform deposition in a subsequent process.

Referring to FIG. 6D, a passivation layer 141 covering the gate pattern120 and the source/drain region 132 is formed (FIG. 5, block 3). Indetail, the passivation layer 141 that is an interlayer dielectric layeris formed on the entire surface of the substrate 110 to cover the gatepattern 120 and the source/drain region 132. The passivation layer 141may be formed of a silicon oxide film, a silicon nitride film, or adouble layer of these films.

Referring to FIGS. 6E and 6F, the passivation layer 141 is removed toexpose the dummy gate pattern 120 and the exposed dummy gate pattern 120is removed to expose the substrate 110 (FIG. 5, block 4). In detail, thepassivation layer 141 is polished by a chemical mechanical polishing(CMP) process to expose the dummy gate pattern 120 and the exposed dummygate pattern 120 is removed by a selective etching process to expose thesubstrate 110. In such a manner, a trench is formed in a region fromwhich the dummy gate pattern 120 is removed.

FIGS. 6G and 6H, an insulation layer 125′ and a metal layer 126′ aresequentially stacked and planarized on the passivation layer 141 whilefilling the trench, thereby forming the gate insulation layer 125 andthe metal gate 126 (FIG. 5, block 5). Specifically, the insulation layer125′ and the metal layer 126′ are sequentially stacked in the trenchformed after removing the passivation layer 141 and the dummy gatepattern 120, and then planarized by etching the insulation layer 125′and the metal layer 126′, thereby allowing the passivation layer 141 tobe exposed. Here, since there is a small difference between thesource/drain region 142 and the gate pattern 120, the passivation layer141 on the source/drain region 132 is substantially completely removedin the process of etching the passivation layer 141, thereby achievingplanarization so that the source/drain region 142 and the metal gate 126have the same height from the substrate 110. The insulation layer 125′may generally be formed a silicon oxide film or made of an insulatingmaterial such as Ta₂O₅, Al₂O₃, and the metal layer 126′ may be made oftungsten (W), WN, Ti, TiN, Mo, and/or Ta, among others.

Through the above-described manner, a poly-gate electrode made ofpolysilicon is removed to form a metal gate. The metal gate may achievelow resistance in a finer line width than the poly-gate.

Referring to FIG. 61, the passivation layer 141 remaining on thesource/drain region 132 is removed (FIG. 5, block 6). In detail, a topportion of the source/drain region 132 is exposed by etching the exposedpassivation layer 141. Here, the passivation layer filling a gap createddue to a facet of the source/drain region 132 is substantiallycompletely removed.

FIG. 6J is a cross-sectional view illustrating forming a firstinsulation layer pattern (FIG. 5, block 10). FIG. 6K is across-sectional view illustrating forming a silicide layer (FIG. 5,block 20), FIG. 6L is a cross-sectional view illustrating forming asecond insulation layer (FIG. 5, block 30), FIG. 6M is a cross-sectionalview illustrating forming a contact hole (FIG. 5, block 40), and FIG. 6Nis a cross-sectional view illustrating filling (FIG. 5, block 50). Sincethe steps of forming a first insulation layer pattern (block 10),forming a second insulation layer (block 30), forming a contact hole(block 40), and filling (block 50) are substantially the same as thosedescribed in the methods of manufacturing a the semiconductor deviceaccording to previous embodiments, and a detailed description thereofwill not be given.

In the methods of manufacturing the semiconductor device according tothe illustrated embodiments disclosed herein, a step difference betweenthe gate pattern and the source/drain region is small to reduce theaspect ratio, thereby obtaining a uniformly deposited film in asubsequent process. In addition, since a silicide layer is formed on thesource/drain region before forming the contact hole, it is not necessaryto form a separate silicide layer into the contact hole. Further, it ispossible to reduce or prevent damage to the metal gate in a salicideprocess.

While the present disclosure has been particularly shown and describedwith reference to example embodiments thereof, it will be understood bythose of ordinary skill in the art that various changes in form anddetails may be made therein without departing from the spirit and scopeof the present disclosure as defined by the following claims. It istherefore desired that the present embodiments be considered in allrespects as illustrative and not restrictive, reference being made tothe appended claims rather than the foregoing description to indicatethe scope of the disclosure.

What is claimed is:
 1. A semiconductor device comprising: a gate patterncomprising a gate insulation layer and a gate electrode formed on asubstrate; a source/drain region formed at substantially opposite sidesof the gate pattern; a silicide layer formed on the source/drain region;an insulation layer formed on the gate pattern and the source/drainregion; and a metal wire contact directly formed on the silicide layerand passing through the insulation layer, wherein the gate pattern andthe source and drain regions have a step difference between a topportion of the gate pattern and a top portion of the source and drainregions of about 250 Å or less from the substrate, wherein the gatepattern and the source/drain region have an aspect ratio of less thanabout 3:1, wherein the aspect ratio is a ratio of the step differencebetween the top portion of the gate pattern and the top portion of thesource/drain region to a width of the source/drain region, and whereinthe top surface of the gate pattern is higher than a bottom surface ofthe metal wire contact, and lower than a top surface of the metal wirecontact.
 2. The semiconductor device of claim 1, wherein thesource/drain region is formed of an epitaxial layer formed in a trenchby etching a predetermined region of the substrate.
 3. The semiconductordevice of claim 2, wherein the trench has a hexagonal profile.
 4. Thesemiconductor device of claim 1, wherein the source/drain regioncomprises Si, SiC, or SiGe.
 5. The semiconductor device of claim 1,wherein the gate insulation layer comprises HfO₂, ZrO₂, Al₂O₃, Ta₂O₅,hafnium silicate, or zirconium silicate.
 6. The semiconductor device ofclaim 1, wherein the gate electrode comprises Ta, TaN, TaSiN, TiN, Mo,Ru, Ni, or NiSi.
 7. The semiconductor device of claim 1, wherein theinsulation layer comprises silicon oxide or silicon nitride (SiN). 8.The semiconductor device of claim 1, wherein the silicide layercomprises Ni, Co, Pt, or Ti.